Texas Instruments NexFET N-Channel MOSFET, 75 A, 40 V, 8-Pin VSONP CSD18504Q5A

Nº de Estoque RS: 827-4883Marca: Texas InstrumentsPart Number: CSD18504Q5A
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Especificações

Channel Type

N

Maximum Continuous Drain Current

75 A

Maximum Drain Source Voltage

40 V

Series

NexFET

Package Type

VSONP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5.8mm

Typical Gate Charge @ Vgs

7.7 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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R$ 170,35

R$ 34,07 Each (In a Pack of 5) (Sem VAT)

Texas Instruments NexFET N-Channel MOSFET, 75 A, 40 V, 8-Pin VSONP CSD18504Q5A
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R$ 170,35

R$ 34,07 Each (In a Pack of 5) (Sem VAT)

Texas Instruments NexFET N-Channel MOSFET, 75 A, 40 V, 8-Pin VSONP CSD18504Q5A

Informações de estoque temporariamente indisponíveis.

Selecione o tipo de embalagem

Informações de estoque temporariamente indisponíveis.

QuantidadePreço unitárioPer Pacote
5 - 20R$ 34,07R$ 170,35
25 - 45R$ 32,82R$ 164,10
50 - 120R$ 30,10R$ 150,50
125 - 245R$ 27,35R$ 136,75
250+R$ 26,53R$ 132,65

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

75 A

Maximum Drain Source Voltage

40 V

Series

NexFET

Package Type

VSONP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5.8mm

Typical Gate Charge @ Vgs

7.7 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more