N-Channel MOSFET, 118 A, 60 V, 3-Pin TO-220 Texas Instruments CSD18533KCS

Nº de Estoque RS: 827-4899Marca: Texas InstrumentsPart Number: CSD18533KCS
brand-logo
View all in MOSFETs

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

118 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

192 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.67mm

Typical Gate Charge @ Vgs

14 nC @ 4.5 V

Width

4.7mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

16.51mm

Series

NexFET

Detalhes do produto

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

Informações de estoque temporariamente indisponíveis.

P.O.A.

N-Channel MOSFET, 118 A, 60 V, 3-Pin TO-220 Texas Instruments CSD18533KCS
Selecione o tipo de embalagem

P.O.A.

N-Channel MOSFET, 118 A, 60 V, 3-Pin TO-220 Texas Instruments CSD18533KCS
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

118 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

192 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.67mm

Typical Gate Charge @ Vgs

14 nC @ 4.5 V

Width

4.7mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

16.51mm

Series

NexFET

Detalhes do produto

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more