N-Channel MOSFET, 273 A, 80 V, 3-Pin TO-220 Texas Instruments CSD19506KCS

Nº de Estoque RS: 827-4903Marca: Texas InstrumentsPart Number: CSD19506KCS
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

273 A

Maximum Drain Source Voltage

80 V

Series

NexFET

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.2V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Length

10.67mm

Typical Gate Charge @ Vgs

120 nC @ 10 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Height

16.51mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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R$ 81,82

Each (Sem VAT)

N-Channel MOSFET, 273 A, 80 V, 3-Pin TO-220 Texas Instruments CSD19506KCS
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R$ 81,82

Each (Sem VAT)

N-Channel MOSFET, 273 A, 80 V, 3-Pin TO-220 Texas Instruments CSD19506KCS
Informações de estoque temporariamente indisponíveis.
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1 - 4R$ 81,82
5 - 9R$ 78,96
10 - 24R$ 71,95
25 - 49R$ 65,92
50+R$ 63,60

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

273 A

Maximum Drain Source Voltage

80 V

Series

NexFET

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.2V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Length

10.67mm

Typical Gate Charge @ Vgs

120 nC @ 10 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Height

16.51mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more