N-Channel MOSFET, 273 A, 80 V, 3-Pin TO-220 Texas Instruments CSD19506KCS
Documentos Técnicos
Especificações
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
273 A
Maximum Drain Source Voltage
80 V
Series
NexFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.2V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
120 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Height
16.51mm
Minimum Operating Temperature
-55 °C
Detalhes do produto
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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P.O.A.
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P.O.A.
1
Ideate. Create. Collaborate
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Documentos Técnicos
Especificações
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
273 A
Maximum Drain Source Voltage
80 V
Series
NexFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.2V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
120 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Height
16.51mm
Minimum Operating Temperature
-55 °C
Detalhes do produto
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products