N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 Texas Instruments CSD19534KCS

Nº de Estoque RS: 145-1334Marca: Texas InstrumentsPart Number: CSD19534KCS
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220

Series

NexFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

118 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.67mm

Typical Gate Charge @ Vgs

17.1 nC @ 0 V

Width

4.7mm

Number of Elements per Chip

1

Forward Diode Voltage

1.1V

Height

16.51mm

Minimum Operating Temperature

-55 °C

País de Origem

Philippines

Detalhes do produto

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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R$ 18,25

Each (In a Tube of 50) (Sem VAT)

N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 Texas Instruments CSD19534KCS

R$ 18,25

Each (In a Tube of 50) (Sem VAT)

N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 Texas Instruments CSD19534KCS
Informações de estoque temporariamente indisponíveis.

Comprar em grandes quantidades

QuantidadePreço unitárioPer Tubo
50 - 50R$ 18,25R$ 912,50
100 - 200R$ 16,69R$ 834,50
250 - 450R$ 15,98R$ 799,00
500 - 700R$ 15,28R$ 764,00
750+R$ 14,52R$ 726,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220

Series

NexFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

118 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.67mm

Typical Gate Charge @ Vgs

17.1 nC @ 0 V

Width

4.7mm

Number of Elements per Chip

1

Forward Diode Voltage

1.1V

Height

16.51mm

Minimum Operating Temperature

-55 °C

País de Origem

Philippines

Detalhes do produto

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more