Documentos Técnicos
Especificações
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
259 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Series
NexFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.2V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.67mm
Typical Gate Charge @ Vgs
118 nC @ 10 V
Width
4.7mm
Number of Elements per Chip
1
Height
16.51mm
Minimum Operating Temperature
-55 °C
País de Origem
Malaysia
Detalhes do produto
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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R$ 70,16
Each (In a Tube of 50) (Sem VAT)
50
R$ 70,16
Each (In a Tube of 50) (Sem VAT)
50
Comprar em grandes quantidades
Quantidade | Preço unitário | Per Tubo |
---|---|---|
50 - 50 | R$ 70,16 | R$ 3.508,00 |
100 - 200 | R$ 57,00 | R$ 2.850,00 |
250+ | R$ 54,23 | R$ 2.711,50 |
Documentos Técnicos
Especificações
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
259 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Series
NexFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.2V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.67mm
Typical Gate Charge @ Vgs
118 nC @ 10 V
Width
4.7mm
Number of Elements per Chip
1
Height
16.51mm
Minimum Operating Temperature
-55 °C
País de Origem
Malaysia
Detalhes do produto