Documentos Técnicos
Especificações
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
12 V
Package Type
PICOSTAR
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
23 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
2.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
1.15mm
Typical Gate Charge @ Vgs
8.4 nC @ 4.5 V
Width
2.2mm
Transistor Material
Si
Series
NexFET
Minimum Operating Temperature
-55 °C
Height
0.2mm
Detalhes do produto
N-Channel NexFET™ Dual MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
P.O.A.
Embalagem de Produção (Bobina)
10
P.O.A.
Embalagem de Produção (Bobina)
10
Documentos Técnicos
Especificações
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
12 V
Package Type
PICOSTAR
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
23 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
2.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
1.15mm
Typical Gate Charge @ Vgs
8.4 nC @ 4.5 V
Width
2.2mm
Transistor Material
Si
Series
NexFET
Minimum Operating Temperature
-55 °C
Height
0.2mm
Detalhes do produto