Documentos Técnicos
Especificações
Brand
ToshibaChannel Type
N
Idss Drain-Source Cut-off Current
0.3 to 0.75mA
Maximum Drain Source Voltage
10 V
Maximum Gate Source Voltage
-30 V
Maximum Drain Gate Voltage
-50V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-346 (SC-59)
Pin Count
3
Dimensions
2.9 x 1.5 x 1.1mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+125 °C
Length
2.9mm
Height
1.1mm
Width
1.5mm
Detalhes do produto
N-channel JFET, Toshiba
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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R$ 5,62
Each (In a Pack of 10) (Sem VAT)
Padrão
10
R$ 5,62
Each (In a Pack of 10) (Sem VAT)
Padrão
10
Comprar em grandes quantidades
Quantidade | Preço unitário | Per Pacote |
---|---|---|
10 - 90 | R$ 5,62 | R$ 56,20 |
100 - 190 | R$ 3,84 | R$ 38,40 |
200 - 390 | R$ 3,49 | R$ 34,90 |
400+ | R$ 3,49 | R$ 34,90 |
Documentos Técnicos
Especificações
Brand
ToshibaChannel Type
N
Idss Drain-Source Cut-off Current
0.3 to 0.75mA
Maximum Drain Source Voltage
10 V
Maximum Gate Source Voltage
-30 V
Maximum Drain Gate Voltage
-50V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-346 (SC-59)
Pin Count
3
Dimensions
2.9 x 1.5 x 1.1mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+125 °C
Length
2.9mm
Height
1.1mm
Width
1.5mm
Detalhes do produto
N-channel JFET, Toshiba
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.