Documentos Técnicos
Especificações
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
900 V
Series
2SK
Package Type
SC-67
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Length
10mm
Typical Gate Charge @ Vgs
28 nC @ 10 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
4.5mm
Height
15mm
Forward Diode Voltage
1.7V
País de Origem
Malaysia
Detalhes do produto
MOSFET N-Channel, 2SK Series, Toshiba
MOSFET Transistors, Toshiba
R$ 153,05
R$ 30,61 Each (In a Pack of 5) (Sem VAT)
5
R$ 153,05
R$ 30,61 Each (In a Pack of 5) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
5
Informações de estoque temporariamente indisponíveis.
| Quantidade | Preço unitário | Per Pacote |
|---|---|---|
| 5 - 20 | R$ 30,61 | R$ 153,05 |
| 25 - 45 | R$ 30,48 | R$ 152,40 |
| 50 - 95 | R$ 30,37 | R$ 151,85 |
| 100 - 245 | R$ 30,12 | R$ 150,60 |
| 250+ | R$ 29,99 | R$ 149,95 |
Documentos Técnicos
Especificações
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
900 V
Series
2SK
Package Type
SC-67
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Length
10mm
Typical Gate Charge @ Vgs
28 nC @ 10 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
4.5mm
Height
15mm
Forward Diode Voltage
1.7V
País de Origem
Malaysia
Detalhes do produto


