Toshiba 2SK N-Channel MOSFET, 5 A, 900 V, 3-Pin SC-67 2SK3565,S5Q(J

Nº de Estoque RS: 890-2695Marca: ToshibaPart Number: 2SK3565,S5Q(J
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Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

900 V

Series

2SK

Package Type

SC-67

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Length

10mm

Typical Gate Charge @ Vgs

28 nC @ 10 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

4.5mm

Height

15mm

Forward Diode Voltage

1.7V

País de Origem

Malaysia

Detalhes do produto

MOSFET N-Channel, 2SK Series, Toshiba

MOSFET Transistors, Toshiba

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R$ 153,05

R$ 30,61 Each (In a Pack of 5) (Sem VAT)

Toshiba 2SK N-Channel MOSFET, 5 A, 900 V, 3-Pin SC-67 2SK3565,S5Q(J

R$ 153,05

R$ 30,61 Each (In a Pack of 5) (Sem VAT)

Toshiba 2SK N-Channel MOSFET, 5 A, 900 V, 3-Pin SC-67 2SK3565,S5Q(J

Informações de estoque temporariamente indisponíveis.

Informações de estoque temporariamente indisponíveis.

QuantidadePreço unitárioPer Pacote
5 - 20R$ 30,61R$ 153,05
25 - 45R$ 30,48R$ 152,40
50 - 95R$ 30,37R$ 151,85
100 - 245R$ 30,12R$ 150,60
250+R$ 29,99R$ 149,95

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

900 V

Series

2SK

Package Type

SC-67

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Length

10mm

Typical Gate Charge @ Vgs

28 nC @ 10 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

4.5mm

Height

15mm

Forward Diode Voltage

1.7V

País de Origem

Malaysia

Detalhes do produto

MOSFET N-Channel, 2SK Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more