Toshiba 2SK N-Channel MOSFET, 5 A, 60 V, 3-Pin PW Mold2 2SK4017(Q)

Nº de Estoque RS: 185-580Marca: ToshibaPart Number: 2SK4017(Q)
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Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

60 V

Series

2SK

Package Type

PW Mold2

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

20 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

15 nC @ 10 V

Width

2.3mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.5mm

Height

5.5mm

Minimum Operating Temperature

-55 °C

País de Origem

Japan

Detalhes do produto

MOSFET N-Channel, 2SK Series, Toshiba

MOSFET Transistors, Toshiba

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Informações de estoque temporariamente indisponíveis.

R$ 110,60

R$ 5,53 Each (In a Pack of 20) (Sem VAT)

Toshiba 2SK N-Channel MOSFET, 5 A, 60 V, 3-Pin PW Mold2 2SK4017(Q)

R$ 110,60

R$ 5,53 Each (In a Pack of 20) (Sem VAT)

Toshiba 2SK N-Channel MOSFET, 5 A, 60 V, 3-Pin PW Mold2 2SK4017(Q)
Informações de estoque temporariamente indisponíveis.

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

QuantidadePreço unitárioPer Pacote
20 - 40R$ 5,53R$ 110,60
60 - 100R$ 4,93R$ 98,60
120 - 220R$ 4,27R$ 85,40
240 - 460R$ 4,25R$ 85,00
480+R$ 4,16R$ 83,20

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

60 V

Series

2SK

Package Type

PW Mold2

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

20 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

15 nC @ 10 V

Width

2.3mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.5mm

Height

5.5mm

Minimum Operating Temperature

-55 °C

País de Origem

Japan

Detalhes do produto

MOSFET N-Channel, 2SK Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more