Documentos Técnicos
Especificações
Brand
ToshibaChannel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
136 mΩ
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+20 V
Number of Elements per Chip
1
Width
1.8mm
Length
2.9mm
Typical Gate Charge @ Vgs
5.9 nC @ -10 V nC
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
0.8mm
País de Origem
Japan
Detalhes do produto
MOSFET P-Channel, SSM3J Series, Toshiba
MOSFET Transistors, Toshiba
R$ 88,80
R$ 2,96 Each (In a Pack of 30) (Sem VAT)
30
R$ 88,80
R$ 2,96 Each (In a Pack of 30) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
30
Informações de estoque temporariamente indisponíveis.
| Quantidade | Preço unitário | Per Pacote |
|---|---|---|
| 30 - 120 | R$ 2,96 | R$ 88,80 |
| 150+ | R$ 2,86 | R$ 85,80 |
Documentos Técnicos
Especificações
Brand
ToshibaChannel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
136 mΩ
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+20 V
Number of Elements per Chip
1
Width
1.8mm
Length
2.9mm
Typical Gate Charge @ Vgs
5.9 nC @ -10 V nC
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
0.8mm
País de Origem
Japan
Detalhes do produto


