Toshiba TK090N65Z Silicon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 TK090N65Z,S1F(S

Nº de Estoque RS: 206-9725Marca: ToshibaPart Number: TK090N65Z,S1F(S
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Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Series

TK090N65Z

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.09 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Transistor Material

Silicon

Number of Elements per Chip

1

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R$ 2.948,10

R$ 98,27 Each (In a Tube of 30) (Sem VAT)

Toshiba TK090N65Z Silicon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 TK090N65Z,S1F(S

30

Disponível em múltiplos de 30
30R$ 2.948,10
60R$ 5.896,20
90R$ 8.844,30
120R$ 11.792,40
150R$ 14.740,50
180R$ 17.688,60
210R$ 20.636,70
240R$ 23.584,80
270R$ 26.532,90
300R$ 29.481,00
330R$ 32.429,10
360R$ 35.377,20
390R$ 38.325,30
420R$ 41.273,40
450R$ 44.221,50

R$ 2.948,10

R$ 98,27 Each (In a Tube of 30) (Sem VAT)

Toshiba TK090N65Z Silicon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 TK090N65Z,S1F(S

Informações de estoque temporariamente indisponíveis.

30

Disponível em múltiplos de 30
30R$ 2.948,10
60R$ 5.896,20
90R$ 8.844,30
120R$ 11.792,40
150R$ 14.740,50
180R$ 17.688,60
210R$ 20.636,70
240R$ 23.584,80
270R$ 26.532,90
300R$ 29.481,00
330R$ 32.429,10
360R$ 35.377,20
390R$ 38.325,30
420R$ 41.273,40
450R$ 44.221,50

Informações de estoque temporariamente indisponíveis.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Series

TK090N65Z

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.09 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Transistor Material

Silicon

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more