Documentos Técnicos
Especificações
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
263 A
Maximum Drain Source Voltage
60 V
Series
U-MOSVIII-H
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
255 W
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.45mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.16mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Height
15.1mm
Forward Diode Voltage
1.2V
País de Origem
Japan
Detalhes do produto
MOSFET Transistors, Toshiba
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
R$ 33,64
Each (In a Pack of 5) (Sem VAT)
5
R$ 33,64
Each (In a Pack of 5) (Sem VAT)
5
Comprar em grandes quantidades
Quantidade | Preço unitário | Per Pacote |
---|---|---|
5 - 20 | R$ 33,64 | R$ 168,20 |
25 - 45 | R$ 30,80 | R$ 154,00 |
50 - 120 | R$ 28,43 | R$ 142,15 |
125+ | R$ 26,99 | R$ 134,95 |
Documentos Técnicos
Especificações
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
263 A
Maximum Drain Source Voltage
60 V
Series
U-MOSVIII-H
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
255 W
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.45mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.16mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Height
15.1mm
Forward Diode Voltage
1.2V
País de Origem
Japan
Detalhes do produto