Toshiba U-MOSVIII-H N-Channel MOSFET, 263 A, 60 V, 3-Pin TO-220 TK100E06N1,S1X(S

Nº de Estoque RS: 125-0528Marca: ToshibaPart Number: TK100E06N1,S1X(S
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Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

263 A

Maximum Drain Source Voltage

60 V

Series

U-MOSVIII-H

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

255 W

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

4.45mm

Length

10.16mm

Typical Gate Charge @ Vgs

140 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.2V

Height

15.1mm

País de Origem

Japan

Detalhes do produto

MOSFET Transistors, Toshiba

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R$ 145,85

R$ 29,17 Each (In a Pack of 5) (Sem VAT)

Toshiba U-MOSVIII-H N-Channel MOSFET, 263 A, 60 V, 3-Pin TO-220 TK100E06N1,S1X(S

5

Disponível em múltiplos de 5
5R$ 145,85
10R$ 291,70
15R$ 437,55
20R$ 583,40
25R$ 667,25
30R$ 800,70
35R$ 934,15
40R$ 1.067,60
45R$ 1.201,05
50R$ 1.233,50
55R$ 1.356,85
60R$ 1.480,20
65R$ 1.603,55
70R$ 1.726,90
75R$ 1.850,25

R$ 145,85

R$ 29,17 Each (In a Pack of 5) (Sem VAT)

Toshiba U-MOSVIII-H N-Channel MOSFET, 263 A, 60 V, 3-Pin TO-220 TK100E06N1,S1X(S

Informações de estoque temporariamente indisponíveis.

5

Disponível em múltiplos de 5
5R$ 145,85
10R$ 291,70
15R$ 437,55
20R$ 583,40
25R$ 667,25
30R$ 800,70
35R$ 934,15
40R$ 1.067,60
45R$ 1.201,05
50R$ 1.233,50
55R$ 1.356,85
60R$ 1.480,20
65R$ 1.603,55
70R$ 1.726,90
75R$ 1.850,25

Informações de estoque temporariamente indisponíveis.

QuantidadePreço unitárioPer Pacote
5 - 20R$ 29,17R$ 145,85
25 - 45R$ 26,69R$ 133,45
50 - 120R$ 24,67R$ 123,35
125+R$ 23,40R$ 117,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

263 A

Maximum Drain Source Voltage

60 V

Series

U-MOSVIII-H

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

255 W

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

4.45mm

Length

10.16mm

Typical Gate Charge @ Vgs

140 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.2V

Height

15.1mm

País de Origem

Japan

Detalhes do produto

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more