Documentos Técnicos
Especificações
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
214 A
Maximum Drain Source Voltage
80 V
Package Type
TO-220
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
255 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
4.45mm
Length
10.16mm
Typical Gate Charge @ Vgs
130 nC @ 10 V
Height
15.1mm
País de Origem
Japan
Detalhes do produto
MOSFET Transistors, Toshiba
R$ 1.378,00
R$ 27,56 Each (In a Tube of 50) (Sem VAT)
50
R$ 1.378,00
R$ 27,56 Each (In a Tube of 50) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
50
Informações de estoque temporariamente indisponíveis.
Documentos Técnicos
Especificações
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
214 A
Maximum Drain Source Voltage
80 V
Package Type
TO-220
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
255 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
4.45mm
Length
10.16mm
Typical Gate Charge @ Vgs
130 nC @ 10 V
Height
15.1mm
País de Origem
Japan
Detalhes do produto


