Documentos Técnicos
Especificações
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
9.7 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220SIS
Series
DTMOSIV
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
380 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
30 W
Maximum Gate Source Voltage
-30 V, +30 V
Length
10mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
4.5mm
Forward Diode Voltage
1.7V
Height
15mm
País de Origem
Japan
Detalhes do produto
MOSFET Transistors, Toshiba
R$ 102,25
R$ 20,45 Each (In a Pack of 5) (Sem VAT)
5
R$ 102,25
R$ 20,45 Each (In a Pack of 5) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
5
Informações de estoque temporariamente indisponíveis.
| Quantidade | Preço unitário | Per Pacote |
|---|---|---|
| 5 - 20 | R$ 20,45 | R$ 102,25 |
| 25 - 45 | R$ 13,48 | R$ 67,40 |
| 50 - 120 | R$ 13,32 | R$ 66,60 |
| 125 - 245 | R$ 13,15 | R$ 65,75 |
| 250+ | R$ 12,96 | R$ 64,80 |
Documentos Técnicos
Especificações
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
9.7 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220SIS
Series
DTMOSIV
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
380 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
30 W
Maximum Gate Source Voltage
-30 V, +30 V
Length
10mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
4.5mm
Forward Diode Voltage
1.7V
Height
15mm
País de Origem
Japan
Detalhes do produto


