N-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK Toshiba TK15S04N1L,LQ(O

Nº de Estoque RS: 133-2798Marca: ToshibaPart Number: TK15S04N1L,LQ(O
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Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

15 A

Maximum Drain Source Voltage

40 V

Package Type

DPAK (TO-252)

Series

U-MOSVIII-H

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

37 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

46 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

6.5mm

Typical Gate Charge @ Vgs

10 nC @ 10 V

Width

5.5mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Height

2.3mm

País de Origem

Japan

Detalhes do produto

MOSFET Transistors, Toshiba

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R$ 103,90

R$ 20,78 Each (In a Pack of 5) (Sem VAT)

N-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK Toshiba TK15S04N1L,LQ(O
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R$ 103,90

R$ 20,78 Each (In a Pack of 5) (Sem VAT)

N-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK Toshiba TK15S04N1L,LQ(O
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

Comprar em grandes quantidades

QuantidadePreço unitárioPer Pacote
5 - 20R$ 20,78R$ 103,90
25 - 45R$ 17,95R$ 89,75
50 - 245R$ 17,57R$ 87,85
250 - 495R$ 17,29R$ 86,45
500+R$ 16,94R$ 84,70

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
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Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

15 A

Maximum Drain Source Voltage

40 V

Package Type

DPAK (TO-252)

Series

U-MOSVIII-H

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

37 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

46 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

6.5mm

Typical Gate Charge @ Vgs

10 nC @ 10 V

Width

5.5mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Height

2.3mm

País de Origem

Japan

Detalhes do produto

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more