Toshiba DTMOSIV N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 TK20N60W5,S1VF(S

Nº de Estoque RS: 125-0551Marca: ToshibaPart Number: TK20N60W5,S1VF(S
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Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

600 V

Package Type

TO-247

Series

DTMOSIV

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

175 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

165 W

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

55 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

5.02mm

Length

15.94mm

Forward Diode Voltage

1.7V

Height

20.95mm

País de Origem

Japan

Detalhes do produto

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

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R$ 266,75

R$ 53,35 Each (In a Pack of 5) (Sem VAT)

Toshiba DTMOSIV N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 TK20N60W5,S1VF(S

5

Disponível em múltiplos de 5
5R$ 266,75
10R$ 533,50
15R$ 800,25
20R$ 1.067,00
25R$ 1.223,75
30R$ 1.468,50
35R$ 1.713,25
40R$ 1.958,00
45R$ 2.202,75
50R$ 2.263,00
55R$ 2.489,30
60R$ 2.715,60
65R$ 2.941,90
70R$ 3.168,20
75R$ 3.394,50

R$ 266,75

R$ 53,35 Each (In a Pack of 5) (Sem VAT)

Toshiba DTMOSIV N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 TK20N60W5,S1VF(S

Informações de estoque temporariamente indisponíveis.

5

Disponível em múltiplos de 5
5R$ 266,75
10R$ 533,50
15R$ 800,25
20R$ 1.067,00
25R$ 1.223,75
30R$ 1.468,50
35R$ 1.713,25
40R$ 1.958,00
45R$ 2.202,75
50R$ 2.263,00
55R$ 2.489,30
60R$ 2.715,60
65R$ 2.941,90
70R$ 3.168,20
75R$ 3.394,50

Informações de estoque temporariamente indisponíveis.

QuantidadePreço unitárioPer Pacote
5 - 20R$ 53,35R$ 266,75
25 - 45R$ 48,95R$ 244,75
50+R$ 45,26R$ 226,30

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

600 V

Package Type

TO-247

Series

DTMOSIV

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

175 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

165 W

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

55 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

5.02mm

Length

15.94mm

Forward Diode Voltage

1.7V

Height

20.95mm

País de Origem

Japan

Detalhes do produto

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more