Documentos Técnicos
Especificações
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
600 V
Series
DTMOSIV
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
125 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
45 W
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10mm
Typical Gate Charge @ Vgs
40 nC @ 10 V
Transistor Material
Si
Height
15mm
Forward Diode Voltage
1.7V
País de Origem
Japan
Detalhes do produto
MOSFET N-Channel, TK2x Series, Toshiba
MOSFET Transistors, Toshiba
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
R$ 215,30
R$ 43,06 Each (In a Pack of 5) (Sem VAT)
5
R$ 215,30
R$ 43,06 Each (In a Pack of 5) (Sem VAT)
5
Comprar em grandes quantidades
Quantidade | Preço unitário | Per Pacote |
---|---|---|
5 - 20 | R$ 43,06 | R$ 215,30 |
25 - 45 | R$ 37,24 | R$ 186,20 |
50+ | R$ 34,75 | R$ 173,75 |
Documentos Técnicos
Especificações
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
600 V
Series
DTMOSIV
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
125 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
45 W
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10mm
Typical Gate Charge @ Vgs
40 nC @ 10 V
Transistor Material
Si
Height
15mm
Forward Diode Voltage
1.7V
País de Origem
Japan
Detalhes do produto