Toshiba DTMOSIV N-Channel MOSFET, 25 A, 600 V, 3-Pin TO-220SIS TK25A60X,S5X(M

Nº de Estoque RS: 125-0553Marca: ToshibaPart Number: TK25A60X,S5X(M
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Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

125 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

45 W

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

4.5mm

Length

10mm

Typical Gate Charge @ Vgs

40 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.7V

Height

15mm

País de Origem

Japan

Detalhes do produto

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

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R$ 214,30

R$ 42,86 Each (In a Pack of 5) (Sem VAT)

Toshiba DTMOSIV N-Channel MOSFET, 25 A, 600 V, 3-Pin TO-220SIS TK25A60X,S5X(M

5

Disponível em múltiplos de 5
5R$ 214,30
10R$ 428,60
15R$ 642,90
20R$ 857,20
25R$ 926,75
30R$ 1.112,10
35R$ 1.297,45
40R$ 1.482,80
45R$ 1.668,15
50R$ 1.729,00
55R$ 1.901,90
60R$ 2.074,80
65R$ 2.247,70
70R$ 2.420,60
75R$ 2.593,50

R$ 214,30

R$ 42,86 Each (In a Pack of 5) (Sem VAT)

Toshiba DTMOSIV N-Channel MOSFET, 25 A, 600 V, 3-Pin TO-220SIS TK25A60X,S5X(M

Informações de estoque temporariamente indisponíveis.

5

Disponível em múltiplos de 5
5R$ 214,30
10R$ 428,60
15R$ 642,90
20R$ 857,20
25R$ 926,75
30R$ 1.112,10
35R$ 1.297,45
40R$ 1.482,80
45R$ 1.668,15
50R$ 1.729,00
55R$ 1.901,90
60R$ 2.074,80
65R$ 2.247,70
70R$ 2.420,60
75R$ 2.593,50

Informações de estoque temporariamente indisponíveis.

QuantidadePreço unitárioPer Pacote
5 - 20R$ 42,86R$ 214,30
25 - 45R$ 37,07R$ 185,35
50+R$ 34,58R$ 172,90

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

125 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

45 W

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

4.5mm

Length

10mm

Typical Gate Charge @ Vgs

40 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.7V

Height

15mm

País de Origem

Japan

Detalhes do produto

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more