Toshiba TK N-Channel MOSFET, 60 A, 120 V, 3-Pin TO-220 TK32E12N1,S1X(S

Nº de Estoque RS: 168-7971Marca: ToshibaPart Number: TK32E12N1,S1X(S
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Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

120 V

Series

TK

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

13.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

98 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

4.45mm

Length

10.16mm

Typical Gate Charge @ Vgs

34 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

15.1mm

País de Origem

China

Detalhes do produto

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

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R$ 764,00

R$ 15,28 Each (In a Tube of 50) (Sem VAT)

Toshiba TK N-Channel MOSFET, 60 A, 120 V, 3-Pin TO-220 TK32E12N1,S1X(S

R$ 764,00

R$ 15,28 Each (In a Tube of 50) (Sem VAT)

Toshiba TK N-Channel MOSFET, 60 A, 120 V, 3-Pin TO-220 TK32E12N1,S1X(S

Informações de estoque temporariamente indisponíveis.

Informações de estoque temporariamente indisponíveis.

QuantidadePreço unitárioPer Tubo
50 - 200R$ 15,28R$ 764,00
250 - 950R$ 13,26R$ 663,00
1000 - 2450R$ 13,13R$ 656,50
2500+R$ 13,00R$ 650,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Você pode estar interessado em

Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

120 V

Series

TK

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

13.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

98 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

4.45mm

Length

10.16mm

Typical Gate Charge @ Vgs

34 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

15.1mm

País de Origem

China

Detalhes do produto

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
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