Toshiba TK N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 TK40E06N1

Nº de Estoque RS: 168-7778Marca: ToshibaPart Number: TK40E06N1
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Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220

Series

TK

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

10.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

67 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

23 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

4.45mm

Length

10.16mm

Height

15.1mm

País de Origem

Japan

Detalhes do produto

MOSFET Transistors, Toshiba

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TK40E06N1 N-Channel MOSFET, 60 A, 60 V TK, 3-Pin TO-220 Toshiba
P.O.A.Each (Supplied in a Tube) (Sem VAT)
Informações de estoque temporariamente indisponíveis.

R$ 642,50

R$ 12,85 Each (In a Tube of 50) (Sem VAT)

Toshiba TK N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 TK40E06N1

R$ 642,50

R$ 12,85 Each (In a Tube of 50) (Sem VAT)

Toshiba TK N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 TK40E06N1
Informações de estoque temporariamente indisponíveis.

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Você pode estar interessado em
TK40E06N1 N-Channel MOSFET, 60 A, 60 V TK, 3-Pin TO-220 Toshiba
P.O.A.Each (Supplied in a Tube) (Sem VAT)

Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220

Series

TK

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

10.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

67 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

23 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

4.45mm

Length

10.16mm

Height

15.1mm

País de Origem

Japan

Detalhes do produto

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Você pode estar interessado em
TK40E06N1 N-Channel MOSFET, 60 A, 60 V TK, 3-Pin TO-220 Toshiba
P.O.A.Each (Supplied in a Tube) (Sem VAT)