Documentos Técnicos
Especificações
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
8.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
126 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
10.16mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
49 nC @ 10 V
Width
4.45mm
Transistor Material
Si
Height
15.1mm
País de Origem
China
Detalhes do produto
MOSFET Transistors, Toshiba
R$ 849,50
R$ 16,99 Each (In a Tube of 50) (Sem VAT)
50
R$ 849,50
R$ 16,99 Each (In a Tube of 50) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
50
Informações de estoque temporariamente indisponíveis.
| Quantidade | Preço unitário | Per Tubo |
|---|---|---|
| 50 - 200 | R$ 16,99 | R$ 849,50 |
| 250 - 450 | R$ 14,76 | R$ 738,00 |
| 500 - 1200 | R$ 14,60 | R$ 730,00 |
| 1250+ | R$ 14,44 | R$ 722,00 |
Documentos Técnicos
Especificações
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
8.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
126 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
10.16mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
49 nC @ 10 V
Width
4.45mm
Transistor Material
Si
Height
15.1mm
País de Origem
China
Detalhes do produto


