Documentos Técnicos
Especificações
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.4V
Minimum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
35 W @ 25 °C
Transistor Configuration
Single
Maximum Gate Source Voltage
+30 V
Number of Elements per Chip
1
Width
4.5mm
Length
10mm
Typical Gate Charge @ Vgs
11 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
-1.7V
Height
15mm
País de Origem
Japan
Detalhes do produto
MOSFET Transistors, Toshiba
R$ 153,60
R$ 7,68 Each (In a Pack of 20) (Sem VAT)
20
R$ 153,60
R$ 7,68 Each (In a Pack of 20) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
20
Informações de estoque temporariamente indisponíveis.
| Quantidade | Preço unitário | Per Pacote |
|---|---|---|
| 20 - 40 | R$ 7,68 | R$ 153,60 |
| 60+ | R$ 7,00 | R$ 140,00 |
Documentos Técnicos
Especificações
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.4V
Minimum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
35 W @ 25 °C
Transistor Configuration
Single
Maximum Gate Source Voltage
+30 V
Number of Elements per Chip
1
Width
4.5mm
Length
10mm
Typical Gate Charge @ Vgs
11 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
-1.7V
Height
15mm
País de Origem
Japan
Detalhes do produto


