Toshiba TK N-Channel MOSFET, 72 A, 120 V, 3-Pin TO-220SIS TK72A12N1,S4X(S

Nº de Estoque RS: 168-7993Marca: ToshibaPart Number: TK72A12N1,S4X(S
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Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

72 A

Maximum Drain Source Voltage

120 V

Package Type

TO-220SIS

Series

TK

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

4.5mm

Length

10mm

Typical Gate Charge @ Vgs

130 nC @ 10 V

Height

15mm

País de Origem

Japan

Detalhes do produto

MOSFET N-Channel, TK6 & TK7 Series, Toshiba

MOSFET Transistors, Toshiba

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R$ 1.748,50

R$ 34,97 Each (In a Tube of 50) (Sem VAT)

Toshiba TK N-Channel MOSFET, 72 A, 120 V, 3-Pin TO-220SIS TK72A12N1,S4X(S

R$ 1.748,50

R$ 34,97 Each (In a Tube of 50) (Sem VAT)

Toshiba TK N-Channel MOSFET, 72 A, 120 V, 3-Pin TO-220SIS TK72A12N1,S4X(S

Informações de estoque temporariamente indisponíveis.

Informações de estoque temporariamente indisponíveis.

QuantidadePreço unitárioPer Tubo
50 - 200R$ 34,97R$ 1.748,50
250 - 450R$ 32,95R$ 1.647,50
500+R$ 32,63R$ 1.631,50

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

72 A

Maximum Drain Source Voltage

120 V

Package Type

TO-220SIS

Series

TK

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

4.5mm

Length

10mm

Typical Gate Charge @ Vgs

130 nC @ 10 V

Height

15mm

País de Origem

Japan

Detalhes do produto

MOSFET N-Channel, TK6 & TK7 Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more