Toshiba U-MOSVIII-H N-Channel MOSFET, 157 A, 80 V, 3-Pin TO-220 TK72E08N1,S1X(S

Nº de Estoque RS: 125-0591Marca: ToshibaPart Number: TK72E08N1,S1X(S
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Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

157 A

Maximum Drain Source Voltage

80 V

Series

U-MOSVIII-H

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

192 W

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

4.45mm

Length

10.16mm

Typical Gate Charge @ Vgs

81 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.2V

Height

15.1mm

País de Origem

Japan

Detalhes do produto

MOSFET N-Channel, TK6 & TK7 Series, Toshiba

MOSFET Transistors, Toshiba

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R$ 125,05

R$ 25,01 Each (In a Pack of 5) (Sem VAT)

Toshiba U-MOSVIII-H N-Channel MOSFET, 157 A, 80 V, 3-Pin TO-220 TK72E08N1,S1X(S

R$ 125,05

R$ 25,01 Each (In a Pack of 5) (Sem VAT)

Toshiba U-MOSVIII-H N-Channel MOSFET, 157 A, 80 V, 3-Pin TO-220 TK72E08N1,S1X(S

Informações de estoque temporariamente indisponíveis.

Informações de estoque temporariamente indisponíveis.

QuantidadePreço unitárioPer Pacote
5 - 20R$ 25,01R$ 125,05
25 - 45R$ 15,28R$ 76,40
50+R$ 14,14R$ 70,70

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

157 A

Maximum Drain Source Voltage

80 V

Series

U-MOSVIII-H

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

192 W

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

4.45mm

Length

10.16mm

Typical Gate Charge @ Vgs

81 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.2V

Height

15.1mm

País de Origem

Japan

Detalhes do produto

MOSFET N-Channel, TK6 & TK7 Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more