Documentos Técnicos
Especificações
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
157 A
Maximum Drain Source Voltage
80 V
Series
U-MOSVIII-H
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
192 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
4.45mm
Length
10.16mm
Typical Gate Charge @ Vgs
81 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.2V
Height
15.1mm
País de Origem
Japan
Detalhes do produto
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
R$ 125,05
R$ 25,01 Each (In a Pack of 5) (Sem VAT)
5
R$ 125,05
R$ 25,01 Each (In a Pack of 5) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
5
Informações de estoque temporariamente indisponíveis.
| Quantidade | Preço unitário | Per Pacote |
|---|---|---|
| 5 - 20 | R$ 25,01 | R$ 125,05 |
| 25 - 45 | R$ 15,28 | R$ 76,40 |
| 50+ | R$ 14,14 | R$ 70,70 |
Documentos Técnicos
Especificações
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
157 A
Maximum Drain Source Voltage
80 V
Series
U-MOSVIII-H
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
192 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
4.45mm
Length
10.16mm
Typical Gate Charge @ Vgs
81 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.2V
Height
15.1mm
País de Origem
Japan
Detalhes do produto


