Documentos Técnicos
Especificações
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
72 A
Maximum Drain Source Voltage
120 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
225 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
4.45mm
Length
10.16mm
Typical Gate Charge @ Vgs
130 nC @ 10 V
Height
15.1mm
País de Origem
China
Detalhes do produto
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
R$ 1.788,00
R$ 35,76 Each (In a Tube of 50) (Sem VAT)
50
R$ 1.788,00
R$ 35,76 Each (In a Tube of 50) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
50
Informações de estoque temporariamente indisponíveis.
| Quantidade | Preço unitário | Per Tubo |
|---|---|---|
| 50 - 200 | R$ 35,76 | R$ 1.788,00 |
| 250 - 450 | R$ 35,35 | R$ 1.767,50 |
| 500+ | R$ 35,03 | R$ 1.751,50 |
Documentos Técnicos
Especificações
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
72 A
Maximum Drain Source Voltage
120 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
225 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
4.45mm
Length
10.16mm
Typical Gate Charge @ Vgs
130 nC @ 10 V
Height
15.1mm
País de Origem
China
Detalhes do produto


