Toshiba TK N-Channel MOSFET, 72 A, 120 V, 3-Pin TO-220 TK72E12N1,S1X(S

Nº de Estoque RS: 896-2436Marca: ToshibaPart Number: TK72E12N1,S1X(S
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Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

72 A

Maximum Drain Source Voltage

120 V

Series

TK

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

225 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10.16mm

Typical Gate Charge @ Vgs

130 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

4.45mm

Height

15.1mm

País de Origem

China

Detalhes do produto

MOSFET N-Channel, TK6 & TK7 Series, Toshiba

MOSFET Transistors, Toshiba

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R$ 132,80

R$ 26,56 Each (In a Pack of 5) (Sem VAT)

Toshiba TK N-Channel MOSFET, 72 A, 120 V, 3-Pin TO-220 TK72E12N1,S1X(S

R$ 132,80

R$ 26,56 Each (In a Pack of 5) (Sem VAT)

Toshiba TK N-Channel MOSFET, 72 A, 120 V, 3-Pin TO-220 TK72E12N1,S1X(S

Informações de estoque temporariamente indisponíveis.

Informações de estoque temporariamente indisponíveis.

QuantidadePreço unitárioPer Pacote
5 - 20R$ 26,56R$ 132,80
25 - 45R$ 23,72R$ 118,60
50 - 95R$ 21,08R$ 105,40
100 - 245R$ 19,97R$ 99,85
250+R$ 19,15R$ 95,75

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

72 A

Maximum Drain Source Voltage

120 V

Series

TK

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

225 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10.16mm

Typical Gate Charge @ Vgs

130 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

4.45mm

Height

15.1mm

País de Origem

China

Detalhes do produto

MOSFET N-Channel, TK6 & TK7 Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more