Toshiba TPC P-Channel MOSFET, 10 A, 30 V, 8-Pin SOP TPC8125

Nº de Estoque RS: 796-5115Marca: ToshibaPart Number: TPC8125
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Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

P

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

30 V

Series

TPC

Package Type

SOP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

17 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.9 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +20 V

Width

3.9mm

Transistor Material

Si

Number of Elements per Chip

1

Length

4.9mm

Typical Gate Charge @ Vgs

64 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.52mm

Detalhes do produto

MOSFET P-Channel, TPC Series, Toshiba

MOSFET Transistors, Toshiba

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Informações de estoque temporariamente indisponíveis.

R$ 59,40

R$ 11,88 Each (In a Pack of 5) (Sem VAT)

Toshiba TPC P-Channel MOSFET, 10 A, 30 V, 8-Pin SOP TPC8125
Selecione o tipo de embalagem

R$ 59,40

R$ 11,88 Each (In a Pack of 5) (Sem VAT)

Toshiba TPC P-Channel MOSFET, 10 A, 30 V, 8-Pin SOP TPC8125
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

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QuantidadePreço unitárioPer Pacote
5 - 45R$ 11,88R$ 59,40
50 - 495R$ 11,41R$ 57,05
500 - 2495R$ 11,03R$ 55,15
2500 - 4995R$ 10,00R$ 50,00
5000+R$ 9,50R$ 47,50

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

P

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

30 V

Series

TPC

Package Type

SOP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

17 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.9 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +20 V

Width

3.9mm

Transistor Material

Si

Number of Elements per Chip

1

Length

4.9mm

Typical Gate Charge @ Vgs

64 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.52mm

Detalhes do produto

MOSFET P-Channel, TPC Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more