Toshiba U-MOSVIII-H N-Channel MOSFET, 40 A, 60 V, 8-Pin SOP TPH11006NL,LQ(S

Nº de Estoque RS: 133-2809Marca: ToshibaPart Number: TPH11006NL,LQ(SDistrelec Article No.: 30409221
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Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

60 V

Series

U-MOSVIII-H

Package Type

SOP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

17 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

34 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

5mm

Length

5mm

Typical Gate Charge @ Vgs

23 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.2V

Height

0.95mm

País de Origem

Japan

Detalhes do produto

MOSFET Transistors, Toshiba

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R$ 129,60

R$ 6,48 Each (In a Pack of 20) (Sem VAT)

Toshiba U-MOSVIII-H N-Channel MOSFET, 40 A, 60 V, 8-Pin SOP TPH11006NL,LQ(S

20

Disponível em múltiplos de 20
20R$ 129,60
40R$ 259,20
60R$ 388,80
80R$ 518,40
100R$ 648,00
120R$ 777,60
140R$ 907,20
160R$ 1.036,80
180R$ 1.166,40
200R$ 1.296,00
220R$ 1.425,60
240R$ 1.555,20
260R$ 1.684,80
280R$ 1.814,40
300R$ 1.944,00

R$ 129,60

R$ 6,48 Each (In a Pack of 20) (Sem VAT)

Toshiba U-MOSVIII-H N-Channel MOSFET, 40 A, 60 V, 8-Pin SOP TPH11006NL,LQ(S

Informações de estoque temporariamente indisponíveis.

20

Disponível em múltiplos de 20
20R$ 129,60
40R$ 259,20
60R$ 388,80
80R$ 518,40
100R$ 648,00
120R$ 777,60
140R$ 907,20
160R$ 1.036,80
180R$ 1.166,40
200R$ 1.296,00
220R$ 1.425,60
240R$ 1.555,20
260R$ 1.684,80
280R$ 1.814,40
300R$ 1.944,00

Informações de estoque temporariamente indisponíveis.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

60 V

Series

U-MOSVIII-H

Package Type

SOP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

17 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

34 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

5mm

Length

5mm

Typical Gate Charge @ Vgs

23 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.2V

Height

0.95mm

País de Origem

Japan

Detalhes do produto

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more