N-Channel MOSFET, 38 A, 30 V, 8-Pin SOP Toshiba TPH8R903NL,LQ(S

Nº de Estoque RS: 133-2810Marca: ToshibaPart Number: TPH8R903NL,LQ(S
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Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

38 A

Maximum Drain Source Voltage

30 V

Series

U-MOSVIII-H

Package Type

SOP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

12.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

24 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

5mm

Typical Gate Charge @ Vgs

9.8 nC @ 10 V

Height

0.95mm

Forward Diode Voltage

1.2V

País de Origem

Japan

Detalhes do produto

MOSFET Transistors, Toshiba

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R$ 143,80

R$ 7,19 Each (In a Pack of 20) (Sem VAT)

N-Channel MOSFET, 38 A, 30 V, 8-Pin SOP Toshiba TPH8R903NL,LQ(S

R$ 143,80

R$ 7,19 Each (In a Pack of 20) (Sem VAT)

N-Channel MOSFET, 38 A, 30 V, 8-Pin SOP Toshiba TPH8R903NL,LQ(S
Informações de estoque temporariamente indisponíveis.

Comprar em grandes quantidades

QuantidadePreço unitárioPer Pacote
20 - 80R$ 7,19R$ 143,80
100 - 180R$ 6,70R$ 134,00
200 - 980R$ 6,62R$ 132,40
1000 - 1980R$ 6,48R$ 129,60
2000+R$ 6,40R$ 128,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

38 A

Maximum Drain Source Voltage

30 V

Series

U-MOSVIII-H

Package Type

SOP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

12.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

24 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

5mm

Typical Gate Charge @ Vgs

9.8 nC @ 10 V

Height

0.95mm

Forward Diode Voltage

1.2V

País de Origem

Japan

Detalhes do produto

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more