Documentos Técnicos
Especificações
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
38 A
Maximum Drain Source Voltage
30 V
Series
U-MOSVIII-H
Package Type
SOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
12.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
24 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
5mm
Typical Gate Charge @ Vgs
9.8 nC @ 10 V
Height
0.95mm
Forward Diode Voltage
1.2V
País de Origem
Japan
Detalhes do produto
MOSFET Transistors, Toshiba
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
R$ 143,80
R$ 7,19 Each (In a Pack of 20) (Sem VAT)
20
R$ 143,80
R$ 7,19 Each (In a Pack of 20) (Sem VAT)
20
Comprar em grandes quantidades
Quantidade | Preço unitário | Per Pacote |
---|---|---|
20 - 80 | R$ 7,19 | R$ 143,80 |
100 - 180 | R$ 6,70 | R$ 134,00 |
200 - 980 | R$ 6,62 | R$ 132,40 |
1000 - 1980 | R$ 6,48 | R$ 129,60 |
2000+ | R$ 6,40 | R$ 128,00 |
Documentos Técnicos
Especificações
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
38 A
Maximum Drain Source Voltage
30 V
Series
U-MOSVIII-H
Package Type
SOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
12.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
24 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
5mm
Typical Gate Charge @ Vgs
9.8 nC @ 10 V
Height
0.95mm
Forward Diode Voltage
1.2V
País de Origem
Japan
Detalhes do produto