Documentos Técnicos
Especificações
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
38 A
Maximum Drain Source Voltage
30 V
Series
U-MOSVIII-H
Package Type
SOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
12.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
24 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
5mm
Typical Gate Charge @ Vgs
9.8 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
5mm
Forward Diode Voltage
1.2V
Height
0.95mm
País de Origem
Japan
Detalhes do produto
MOSFET Transistors, Toshiba
R$ 142,80
R$ 7,14 Each (In a Pack of 20) (Sem VAT)
20
R$ 142,80
R$ 7,14 Each (In a Pack of 20) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
20
Informações de estoque temporariamente indisponíveis.
| Quantidade | Preço unitário | Per Pacote |
|---|---|---|
| 20 - 80 | R$ 7,14 | R$ 142,80 |
| 100 - 180 | R$ 6,67 | R$ 133,40 |
| 200 - 980 | R$ 6,59 | R$ 131,80 |
| 1000 - 1980 | R$ 6,46 | R$ 129,20 |
| 2000+ | R$ 6,37 | R$ 127,40 |
Documentos Técnicos
Especificações
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
38 A
Maximum Drain Source Voltage
30 V
Series
U-MOSVIII-H
Package Type
SOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
12.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
24 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
5mm
Typical Gate Charge @ Vgs
9.8 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
5mm
Forward Diode Voltage
1.2V
Height
0.95mm
País de Origem
Japan
Detalhes do produto


