Toshiba U-MOSVIII-H N-Channel MOSFET, 31 A, 30 V, 8-Pin TSON TPN11003NL,LQ(S

Nº de Estoque RS: 133-2811Marca: ToshibaPart Number: TPN11003NL,LQ(S
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Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

30 V

Series

U-MOSVIII-H

Package Type

TSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

16 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

19 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

3.1mm

Length

3.1mm

Typical Gate Charge @ Vgs

7.5 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.2V

Height

0.85mm

País de Origem

Japan

Detalhes do produto

MOSFET Transistors, Toshiba

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R$ 92,20

R$ 4,61 Each (In a Pack of 20) (Sem VAT)

Toshiba U-MOSVIII-H N-Channel MOSFET, 31 A, 30 V, 8-Pin TSON TPN11003NL,LQ(S

R$ 92,20

R$ 4,61 Each (In a Pack of 20) (Sem VAT)

Toshiba U-MOSVIII-H N-Channel MOSFET, 31 A, 30 V, 8-Pin TSON TPN11003NL,LQ(S

Informações de estoque temporariamente indisponíveis.

Informações de estoque temporariamente indisponíveis.

QuantidadePreço unitárioPer Pacote
20 - 80R$ 4,61R$ 92,20
100 - 180R$ 3,97R$ 79,40
200 - 980R$ 3,73R$ 74,60
1000 - 1980R$ 3,62R$ 72,40
2000+R$ 3,60R$ 72,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

30 V

Series

U-MOSVIII-H

Package Type

TSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

16 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

19 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

3.1mm

Length

3.1mm

Typical Gate Charge @ Vgs

7.5 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.2V

Height

0.85mm

País de Origem

Japan

Detalhes do produto

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more