Toshiba U-MOSVIII-H N-Channel MOSFET, 21 A, 100 V, 8-Pin TSON TPN3300ANH,LQ(S
Documentos Técnicos
Especificações
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
21 A
Maximum Drain Source Voltage
100 V
Package Type
TSON
Series
U-MOSVIII-H
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
33 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
27 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
3.1mm
Length
3.1mm
Typical Gate Charge @ Vgs
11 nC @ 10 V
Forward Diode Voltage
1.2V
Height
0.85mm
País de Origem
Japan
Detalhes do produto
MOSFET Transistors, Toshiba
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P.O.A.
Each (In a Pack of 20) (Sem VAT)
20
P.O.A.
Each (In a Pack of 20) (Sem VAT)
20
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Documentos Técnicos
Especificações
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
21 A
Maximum Drain Source Voltage
100 V
Package Type
TSON
Series
U-MOSVIII-H
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
33 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
27 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
3.1mm
Length
3.1mm
Typical Gate Charge @ Vgs
11 nC @ 10 V
Forward Diode Voltage
1.2V
Height
0.85mm
País de Origem
Japan
Detalhes do produto
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products