Documentos Técnicos
Especificações
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
40 V
Series
TrenchFET
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Typical Gate Charge @ Vgs
12.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.02mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
País de Origem
China
R$ 344,50
R$ 6,89 Each (In a Pack of 50) (Sem VAT)
Padrão
50
R$ 344,50
R$ 6,89 Each (In a Pack of 50) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Padrão
50
Informações de estoque temporariamente indisponíveis.
| Quantidade | Preço unitário | Per Pacote |
|---|---|---|
| 50 - 50 | R$ 6,89 | R$ 344,50 |
| 100 - 450 | R$ 5,94 | R$ 297,00 |
| 500 - 950 | R$ 5,34 | R$ 267,00 |
| 1000+ | R$ 4,72 | R$ 236,00 |
Documentos Técnicos
Especificações
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
40 V
Series
TrenchFET
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Typical Gate Charge @ Vgs
12.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.02mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
País de Origem
China


