Vishay Siliconix TrenchFET N-Channel MOSFET, 12 A, 60 V, 6-Pin SC-70-6L SiA106DJ-T1-GE3

Nº de Estoque RS: 178-3901Marca: Vishay SiliconixPart Number: SiA106DJ-T1-GE3
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

60 V

Package Type

SC-70-6L

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

19 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

2.2mm

Typical Gate Charge @ Vgs

8.9 nC @ 10 V

Number of Elements per Chip

1

Width

1.35mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1mm

País de Origem

China

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R$ 101,60

R$ 10,16 Each (In a Pack of 10) (Sem VAT)

Vishay Siliconix TrenchFET N-Channel MOSFET, 12 A, 60 V, 6-Pin SC-70-6L SiA106DJ-T1-GE3
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R$ 101,60

R$ 10,16 Each (In a Pack of 10) (Sem VAT)

Vishay Siliconix TrenchFET N-Channel MOSFET, 12 A, 60 V, 6-Pin SC-70-6L SiA106DJ-T1-GE3

Informações de estoque temporariamente indisponíveis.

Selecione o tipo de embalagem

Informações de estoque temporariamente indisponíveis.

QuantidadePreço unitárioPer Pacote
10 - 40R$ 10,16R$ 101,60
50 - 90R$ 9,29R$ 92,90
100 - 490R$ 8,86R$ 88,60
500 - 990R$ 8,47R$ 84,70
1000+R$ 7,55R$ 75,50

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

60 V

Package Type

SC-70-6L

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

19 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

2.2mm

Typical Gate Charge @ Vgs

8.9 nC @ 10 V

Number of Elements per Chip

1

Width

1.35mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1mm

País de Origem

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more