Documentos Técnicos
Especificações
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
60 V
Series
TrenchFET
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.46V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Length
3.04mm
Typical Gate Charge @ Vgs
2 nC @ 4.5 V
Transistor Material
Si
Width
1.4mm
Automotive Standard
AEC-Q101
Height
1.02mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
País de Origem
China
R$ 234,25
R$ 9,37 Each (In a Pack of 25) (Sem VAT)
Padrão
25
R$ 234,25
R$ 9,37 Each (In a Pack of 25) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Padrão
25
Informações de estoque temporariamente indisponíveis.
| Quantidade | Preço unitário | Per Pacote |
|---|---|---|
| 25 - 75 | R$ 9,37 | R$ 234,25 |
| 100 - 475 | R$ 6,70 | R$ 167,50 |
| 500 - 975 | R$ 5,69 | R$ 142,25 |
| 1000+ | R$ 4,91 | R$ 122,75 |
Documentos Técnicos
Especificações
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
60 V
Series
TrenchFET
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.46V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Length
3.04mm
Typical Gate Charge @ Vgs
2 nC @ 4.5 V
Transistor Material
Si
Width
1.4mm
Automotive Standard
AEC-Q101
Height
1.02mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
País de Origem
China


