Documentos Técnicos
Especificações
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
40 V
Series
TrenchFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
10 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Width
2.38mm
Length
6.73mm
Typical Gate Charge @ Vgs
185 nC @ 10 V
Transistor Material
Si
Height
6.22mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
País de Origem
Taiwan, Province Of China
R$ 217,10
R$ 21,71 Each (In a Pack of 10) (Sem VAT)
Padrão
10
R$ 217,10
R$ 21,71 Each (In a Pack of 10) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Padrão
10
Informações de estoque temporariamente indisponíveis.
| Quantidade | Preço unitário | Per Pacote |
|---|---|---|
| 10 - 90 | R$ 21,71 | R$ 217,10 |
| 100 - 490 | R$ 18,74 | R$ 187,40 |
| 500 - 990 | R$ 16,80 | R$ 168,00 |
| 1000+ | R$ 14,76 | R$ 147,60 |
Documentos Técnicos
Especificações
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
40 V
Series
TrenchFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
10 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Width
2.38mm
Length
6.73mm
Typical Gate Charge @ Vgs
185 nC @ 10 V
Transistor Material
Si
Height
6.22mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
País de Origem
Taiwan, Province Of China


