Documentos Técnicos
Especificações
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
40 V
Package Type
PowerPAK 1212-8
Series
TrenchFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
27.8 W
Maximum Gate Source Voltage
±20 V
Length
3.15mm
Typical Gate Charge @ Vgs
11.5 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
2
Width
3.15mm
Automotive Standard
AEC-Q101
Height
1.07mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
País de Origem
China
R$ 22.980,00
R$ 7,66 Each (On a Reel of 3000) (Sem VAT)
3000
R$ 22.980,00
R$ 7,66 Each (On a Reel of 3000) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
3000
Informações de estoque temporariamente indisponíveis.
Documentos Técnicos
Especificações
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
40 V
Package Type
PowerPAK 1212-8
Series
TrenchFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
27.8 W
Maximum Gate Source Voltage
±20 V
Length
3.15mm
Typical Gate Charge @ Vgs
11.5 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
2
Width
3.15mm
Automotive Standard
AEC-Q101
Height
1.07mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
País de Origem
China


