Vishay N-Channel MOSFET, 10 A, 400 V, 3-Pin TO-220AB IRF740PBF

Nº de Estoque RS: 541-0020Marca: VishayPart Number: IRF740PBFDistrelec Article No.: 17115835
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Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

400 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

550 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

63 nC @ 10 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Maximum Operating Temperature

+150 °C

Height

9.01mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

N-Channel MOSFET, 300V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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R$ 39,73

R$ 39,73 Each (Sem VAT)

Vishay N-Channel MOSFET, 10 A, 400 V, 3-Pin TO-220AB IRF740PBF

R$ 39,73

R$ 39,73 Each (Sem VAT)

Vishay N-Channel MOSFET, 10 A, 400 V, 3-Pin TO-220AB IRF740PBF
Informações de estoque temporariamente indisponíveis.

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

QuantidadePreço unitário
1 - 9R$ 39,73
10 - 49R$ 35,24
50 - 99R$ 34,07
100 - 249R$ 32,54
250+R$ 30,74

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
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Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

400 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

550 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

63 nC @ 10 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Maximum Operating Temperature

+150 °C

Height

9.01mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

N-Channel MOSFET, 300V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Você pode estar interessado em