Documentos Técnicos
Especificações
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6.8 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.41mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
18 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Height
9.01mm
Minimum Operating Temperature
-55 °C
País de Origem
China
Detalhes do produto
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
R$ 211,90
R$ 21,19 Each (In a Pack of 10) (Sem VAT)
Padrão
10
R$ 211,90
R$ 21,19 Each (In a Pack of 10) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Padrão
10
Informações de estoque temporariamente indisponíveis.
| Quantidade | Preço unitário | Per Pacote |
|---|---|---|
| 10 - 40 | R$ 21,19 | R$ 211,90 |
| 50 - 90 | R$ 21,05 | R$ 210,50 |
| 100 - 240 | R$ 18,49 | R$ 184,90 |
| 250 - 490 | R$ 17,95 | R$ 179,50 |
| 500+ | R$ 14,84 | R$ 148,40 |
Documentos Técnicos
Especificações
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6.8 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.41mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
18 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Height
9.01mm
Minimum Operating Temperature
-55 °C
País de Origem
China
Detalhes do produto


