Documentos Técnicos
Especificações
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6.8 A
Maximum Drain Source Voltage
200 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.67mm
Typical Gate Charge @ Vgs
44 nC @ 10 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
9.65mm
Transistor Material
Si
Height
4.83mm
Minimum Operating Temperature
-55 °C
País de Origem
China
Detalhes do produto
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
R$ 345,60
R$ 34,56 Each (In a Pack of 10) (Sem VAT)
Padrão
10
R$ 345,60
R$ 34,56 Each (In a Pack of 10) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Padrão
10
Informações de estoque temporariamente indisponíveis.
| Quantidade | Preço unitário | Per Pacote |
|---|---|---|
| 10 - 10 | R$ 34,56 | R$ 345,60 |
| 20 - 40 | R$ 28,76 | R$ 287,60 |
| 50 - 90 | R$ 27,43 | R$ 274,30 |
| 100 - 240 | R$ 26,77 | R$ 267,70 |
| 250+ | R$ 25,68 | R$ 256,80 |
Documentos Técnicos
Especificações
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6.8 A
Maximum Drain Source Voltage
200 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.67mm
Typical Gate Charge @ Vgs
44 nC @ 10 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
9.65mm
Transistor Material
Si
Height
4.83mm
Minimum Operating Temperature
-55 °C
País de Origem
China
Detalhes do produto


