Documentos Técnicos
Especificações
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
4.7 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
43 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.51mm
Typical Gate Charge @ Vgs
12 nC @ 10 V
Width
4.65mm
Minimum Operating Temperature
-55 °C
Height
15.49mm
País de Origem
China
Detalhes do produto
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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R$ 22,36
Each (In a Tube of 50) (Sem VAT)
50
R$ 22,36
Each (In a Tube of 50) (Sem VAT)
50
Comprar em grandes quantidades
Quantidade | Preço unitário | Per Tubo |
---|---|---|
50 - 50 | R$ 22,36 | R$ 1.118,00 |
100 - 200 | R$ 19,33 | R$ 966,50 |
250+ | R$ 17,29 | R$ 864,50 |
Documentos Técnicos
Especificações
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
4.7 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
43 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.51mm
Typical Gate Charge @ Vgs
12 nC @ 10 V
Width
4.65mm
Minimum Operating Temperature
-55 °C
Height
15.49mm
País de Origem
China
Detalhes do produto