Vishay P-Channel MOSFET, 18 A, 60 V, 3-Pin TO-220AB IRF9Z34PBF

Nº de Estoque RS: 708-4755Marca: VishayPart Number: IRF9Z34PBF
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Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

140 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

88 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

34 nC @ 10 V

Height

9.01mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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R$ 170,65

R$ 34,13 Each (In a Pack of 5) (Sem VAT)

Vishay P-Channel MOSFET, 18 A, 60 V, 3-Pin TO-220AB IRF9Z34PBF
Selecione o tipo de embalagem

R$ 170,65

R$ 34,13 Each (In a Pack of 5) (Sem VAT)

Vishay P-Channel MOSFET, 18 A, 60 V, 3-Pin TO-220AB IRF9Z34PBF

Informações de estoque temporariamente indisponíveis.

Selecione o tipo de embalagem

Informações de estoque temporariamente indisponíveis.

QuantidadePreço unitárioPer Pacote
5 - 45R$ 34,13R$ 170,65
50 - 120R$ 31,19R$ 155,95
125 - 245R$ 28,16R$ 140,80
250 - 495R$ 26,80R$ 134,00
500+R$ 25,36R$ 126,80

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

140 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

88 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

34 nC @ 10 V

Height

9.01mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more