Documentos Técnicos
Especificações
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.2 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
74 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.7mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.41mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Height
9.01mm
Minimum Operating Temperature
-55 °C
País de Origem
China
Detalhes do produto
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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R$ 42,16
Each (In a Tube of 50) (Sem VAT)
50
R$ 42,16
Each (In a Tube of 50) (Sem VAT)
50
Comprar em grandes quantidades
Quantidade | Preço unitário | Per Tubo |
---|---|---|
50 - 50 | R$ 42,16 | R$ 2.108,00 |
100 - 200 | R$ 36,38 | R$ 1.819,00 |
250+ | R$ 34,81 | R$ 1.740,50 |
Documentos Técnicos
Especificações
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.2 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
74 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.7mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.41mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Height
9.01mm
Minimum Operating Temperature
-55 °C
País de Origem
China
Detalhes do produto