Vishay N-Channel MOSFET, 3.6 A, 600 V, 3-Pin TO-220AB IRFBC30PBF

Nº de Estoque RS: 542-9507Marca: VishayPart Number: IRFBC30PBF
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Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

3.6 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2.2 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

74 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

31 nC @ 10 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Height

9.01mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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N-channel MOSFET,IRFBC30 3.6A 600V
P.O.A.Each (Sem VAT)

R$ 41,92

R$ 41,92 Each (Sem VAT)

Vishay N-Channel MOSFET, 3.6 A, 600 V, 3-Pin TO-220AB IRFBC30PBF
Selecione o tipo de embalagem

R$ 41,92

R$ 41,92 Each (Sem VAT)

Vishay N-Channel MOSFET, 3.6 A, 600 V, 3-Pin TO-220AB IRFBC30PBF

Informações de estoque temporariamente indisponíveis.

Selecione o tipo de embalagem

Informações de estoque temporariamente indisponíveis.

QuantidadePreço unitário
1 - 9R$ 41,92
10 - 49R$ 40,18
50 - 99R$ 36,58
100 - 249R$ 35,14
250+R$ 33,36

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Você pode estar interessado em
N-channel MOSFET,IRFBC30 3.6A 600V
P.O.A.Each (Sem VAT)

Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

3.6 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2.2 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

74 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

31 nC @ 10 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Height

9.01mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Você pode estar interessado em
N-channel MOSFET,IRFBC30 3.6A 600V
P.O.A.Each (Sem VAT)