Vishay N-Channel MOSFET, 600 mA, 200 V, 4-Pin HVMDIP IRFD210PBF

Nº de Estoque RS: 541-0531Marca: VishayPart Number: IRFD210PBF
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Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

600 mA

Maximum Drain Source Voltage

200 V

Package Type

HVMDIP

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

8.2 nC @ 10 V

Width

6.29mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Maximum Operating Temperature

+150 °C

Height

3.37mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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N-channel MOSFET,IRFD210 0.6A 200V
P.O.A.Each (Sem VAT)

R$ 17,68

R$ 17,68 Each (Sem VAT)

Vishay N-Channel MOSFET, 600 mA, 200 V, 4-Pin HVMDIP IRFD210PBF

R$ 17,68

R$ 17,68 Each (Sem VAT)

Vishay N-Channel MOSFET, 600 mA, 200 V, 4-Pin HVMDIP IRFD210PBF

Informações de estoque temporariamente indisponíveis.

Informações de estoque temporariamente indisponíveis.

QuantidadePreço unitário
1 - 9R$ 17,68
10 - 49R$ 16,39
50 - 99R$ 14,57
100 - 249R$ 14,24
250+R$ 12,85

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Você pode estar interessado em
N-channel MOSFET,IRFD210 0.6A 200V
P.O.A.Each (Sem VAT)

Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

600 mA

Maximum Drain Source Voltage

200 V

Package Type

HVMDIP

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

8.2 nC @ 10 V

Width

6.29mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Maximum Operating Temperature

+150 °C

Height

3.37mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Você pode estar interessado em
N-channel MOSFET,IRFD210 0.6A 200V
P.O.A.Each (Sem VAT)