P-Channel MOSFET, 1.6 A, 60 V, 4-Pin HVMDIP Vishay IRFD9020PBF

Nº de Estoque RS: 145-1912Marca: VishayPart Number: IRFD9020PBF
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Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

1.6 A

Maximum Drain Source Voltage

60 V

Package Type

HVMDIP

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

6.29mm

Typical Gate Charge @ Vgs

19 nC @ 10 V

Height

3.37mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

6.3V

País de Origem

Philippines

Detalhes do produto

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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R$ 19,82

Each (In a Tube of 100) (Sem VAT)

P-Channel MOSFET, 1.6 A, 60 V, 4-Pin HVMDIP Vishay IRFD9020PBF

R$ 19,82

Each (In a Tube of 100) (Sem VAT)

P-Channel MOSFET, 1.6 A, 60 V, 4-Pin HVMDIP Vishay IRFD9020PBF
Informações de estoque temporariamente indisponíveis.

Comprar em grandes quantidades

QuantidadePreço unitárioPer Tubo
100 - 100R$ 19,82R$ 1.982,00
200 - 400R$ 19,74R$ 1.974,00
500+R$ 19,01R$ 1.901,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

1.6 A

Maximum Drain Source Voltage

60 V

Package Type

HVMDIP

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

6.29mm

Typical Gate Charge @ Vgs

19 nC @ 10 V

Height

3.37mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

6.3V

País de Origem

Philippines

Detalhes do produto

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more