Documentos Técnicos
Especificações
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
1.6 A
Maximum Drain Source Voltage
60 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
6.29mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Height
3.37mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
6.3V
País de Origem
Philippines
Detalhes do produto
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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R$ 19,82
Each (In a Tube of 100) (Sem VAT)
100
R$ 19,82
Each (In a Tube of 100) (Sem VAT)
100
Comprar em grandes quantidades
Quantidade | Preço unitário | Per Tubo |
---|---|---|
100 - 100 | R$ 19,82 | R$ 1.982,00 |
200 - 400 | R$ 19,74 | R$ 1.974,00 |
500+ | R$ 19,01 | R$ 1.901,00 |
Documentos Técnicos
Especificações
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
1.6 A
Maximum Drain Source Voltage
60 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
6.29mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Height
3.37mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
6.3V
País de Origem
Philippines
Detalhes do produto