N-Channel MOSFET, 4.5 A, 100 V, 3-Pin TO-220FP Vishay IRFI510GPBF

Nº de Estoque RS: 145-2042Marca: VishayPart Number: IRFI510GPBF
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Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

4.5 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

540 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

27 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.83mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.63mm

Typical Gate Charge @ Vgs

8.3 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

16.12mm

País de Origem

China

Detalhes do produto

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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R$ 8,75

Each (In a Tube of 50) (Sem VAT)

N-Channel MOSFET, 4.5 A, 100 V, 3-Pin TO-220FP Vishay IRFI510GPBF

R$ 8,75

Each (In a Tube of 50) (Sem VAT)

N-Channel MOSFET, 4.5 A, 100 V, 3-Pin TO-220FP Vishay IRFI510GPBF
Informações de estoque temporariamente indisponíveis.

Comprar em grandes quantidades

QuantidadePreço unitárioPer Tubo
50 - 450R$ 8,75R$ 437,50
500 - 1200R$ 8,36R$ 418,00
1250 - 2450R$ 7,68R$ 384,00
2500 - 4950R$ 7,33R$ 366,50
5000+R$ 6,97R$ 348,50

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

4.5 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

540 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

27 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.83mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.63mm

Typical Gate Charge @ Vgs

8.3 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

16.12mm

País de Origem

China

Detalhes do produto

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more