Vishay P-Channel MOSFET, 4.1 A, 250 V, 3-Pin TO-220FP IRFI9634GPBF

Nº de Estoque RS: 708-4780Marca: VishayPart Number: IRFI9634GPBF
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Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

4.1 A

Maximum Drain Source Voltage

250 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

38 nC @ 10 V

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Height

9.8mm

Minimum Operating Temperature

-55 °C

País de Origem

China

Detalhes do produto

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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R$ 198,95

R$ 39,79 Each (In a Pack of 5) (Sem VAT)

Vishay P-Channel MOSFET, 4.1 A, 250 V, 3-Pin TO-220FP IRFI9634GPBF
Selecione o tipo de embalagem

R$ 198,95

R$ 39,79 Each (In a Pack of 5) (Sem VAT)

Vishay P-Channel MOSFET, 4.1 A, 250 V, 3-Pin TO-220FP IRFI9634GPBF

Informações de estoque temporariamente indisponíveis.

Selecione o tipo de embalagem

Informações de estoque temporariamente indisponíveis.

QuantidadePreço unitárioPer Pacote
5 - 45R$ 39,79R$ 198,95
50 - 120R$ 34,37R$ 171,85
125 - 245R$ 32,82R$ 164,10
250 - 495R$ 31,24R$ 156,20
500+R$ 29,58R$ 147,90

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

4.1 A

Maximum Drain Source Voltage

250 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

38 nC @ 10 V

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Height

9.8mm

Minimum Operating Temperature

-55 °C

País de Origem

China

Detalhes do produto

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more